IGBT MODULE WITH HIGH INSULATION VOLTAGE

The present invention belongs to the technical field of power modules, and relates to an IGBT module with a high insulation voltage. The IGBT module comprises: a plurality of power semiconductor chips and a plurality of DBC ceramic substrates, which are located in an insulation housing, wherein the plurality of power semiconductor chips and an auxiliary circuit are all encapsulated in the insulation housing; an electrode of the IGBT module is connected to the DBC ceramic substrates and is exposed from an upper surface of the insulation housing; the plurality of DBC ceramic substrate are welded in a stacked manner, and the DBC ceramic substrate at a bottom layer is welded to a bottom plate; and an insulation material is potted in the IGBT module. In the IGBT module with a high insulation voltage, a plurality of DBC ceramic substrates are welded in a stacked manner, and in combination with the encapsulation of a high insulation potting material such as epoxy resin, the high insulation property of the IGBT modul