CRYSTALLINE SILICON SOLAR CELL

Disclosed in the present invention is a crystalline silicon solar cell. A gate line electrode of the crystalline silicon solar cell comprises: a first metal layer formed on a doped conductive layer, a dielectric conductive layer formed on the first metal layer, and a second metal layer formed on the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG, Yongfeng, YANG, Ligong, XI, Qipeng
Format: Patent
Sprache:chi ; eng ; fre
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Beschreibung
Zusammenfassung:Disclosed in the present invention is a crystalline silicon solar cell. A gate line electrode of the crystalline silicon solar cell comprises: a first metal layer formed on a doped conductive layer, a dielectric conductive layer formed on the first metal layer, and a second metal layer formed on the dielectric conductive layer; a metal silicide or a multi-component compound containing metal-silicon as a main component is formed at the interface between the first metal layer and the doped conductive layer; the dielectric conductive layer is a metal nitride, carbide, boride, phosphide or metal oxynitride. According to the present invention, an electrode contact portion of a crystalline silicon photovoltaic cell is improved: firstly, a silver electrode material high in cost and a high-temperature sintering are replaced, so that the production cost is greatly reduced, and the probability of applying a low-cost metal to the crystalline silicon photovoltaic cell is broadened; and secondly, when metal contact with a