SELECTIVE DEPOSITION OF RUTHENIUM FILM BY UTILIZING RU(I) PRECURSORS

The disclosed and claimed subject matter relates to the use of Ru(I) precursors in ALD or ALD-like processes for the selective deposition of Ru films. L'invention concerne l'utilisation de précurseurs de Ru(I) dans des procédés ALD ou de type ALD pour le dépôt sélectif de films de Ru....

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Bibliographische Detailangaben
Hauptverfasser:	ZOPE, Bhushan, LIU, Po-Chun
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The disclosed and claimed subject matter relates to the use of Ru(I) precursors in ALD or ALD-like processes for the selective deposition of Ru films. L'invention concerne l'utilisation de précurseurs de Ru(I) dans des procédés ALD ou de type ALD pour le dépôt sélectif de films de Ru.