METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply in...
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| creator | ASRANI, Soham Sunjay YIEH, Ellie CHEN, Erica TANNOS, Jethro CITLA, Bhargav Sridhar NEMANI, Srinivas D RUBNITZ, Joshua Alan BEKIARIS, Nikolaos BUCHBERGER, JR |
| description | Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.
La présente invention concerne des procédés et un appareil de traitement d'un substrat. Par exemple, un procédé de traitement d'un substrat consiste à introduire un précurseur contenant du silicium vaporisé à partir d'une alimentation en gaz dans un volume de traitement d'une chambre de traitement, à introduire un premier gaz de traitement à partir de l'alimentation en gaz dans le volume de traitement, à exciter le premier gaz de traitement à l'aide d'une puissance de source RF à un premier cycle de service pour générer une réaction avec le précurseur contenant du silicium vaporisé, et à fournir un mélange de gaz de traitement à partir de l'alimentation en gaz tout en fournissant une puissance de polarisation RF à un second cycle de service différent du premier cycle de service à un support de substrat disposé dans le volume de traitement pour déposer un film SiHx sur un substrat supporté sur le support de substrat. |
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La présente invention concerne des procédés et un appareil de traitement d'un substrat. Par exemple, un procédé de traitement d'un substrat consiste à introduire un précurseur contenant du silicium vaporisé à partir d'une alimentation en gaz dans un volume de traitement d'une chambre de traitement, à introduire un premier gaz de traitement à partir de l'alimentation en gaz dans le volume de traitement, à exciter le premier gaz de traitement à l'aide d'une puissance de source RF à un premier cycle de service pour générer une réaction avec le précurseur contenant du silicium vaporisé, et à fournir un mélange de gaz de traitement à partir de l'alimentation en gaz tout en fournissant une puissance de polarisation RF à un second cycle de service différent du premier cycle de service à un support de substrat disposé dans le volume de traitement pour déposer un film SiHx sur un substrat supporté sur le support de substrat.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220929&DB=EPODOC&CC=WO&NR=2022203763A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220929&DB=EPODOC&CC=WO&NR=2022203763A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASRANI, Soham Sunjay</creatorcontrib><creatorcontrib>YIEH, Ellie</creatorcontrib><creatorcontrib>CHEN, Erica</creatorcontrib><creatorcontrib>TANNOS, Jethro</creatorcontrib><creatorcontrib>CITLA, Bhargav Sridhar</creatorcontrib><creatorcontrib>NEMANI, Srinivas D</creatorcontrib><creatorcontrib>RUBNITZ, Joshua Alan</creatorcontrib><creatorcontrib>BEKIARIS, Nikolaos</creatorcontrib><creatorcontrib>BUCHBERGER, JR</creatorcontrib><title>METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE</title><description>Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.
La présente invention concerne des procédés et un appareil de traitement d'un substrat. Par exemple, un procédé de traitement d'un substrat consiste à introduire un précurseur contenant du silicium vaporisé à partir d'une alimentation en gaz dans un volume de traitement d'une chambre de traitement, à introduire un premier gaz de traitement à partir de l'alimentation en gaz dans le volume de traitement, à exciter le premier gaz de traitement à l'aide d'une puissance de source RF à un premier cycle de service pour générer une réaction avec le précurseur contenant du silicium vaporisé, et à fournir un mélange de gaz de traitement à partir de l'alimentation en gaz tout en fournissant une puissance de polarisation RF à un second cycle de service différent du premier cycle de service à un support de substrat disposé dans le volume de traitement pour déposer un film SiHx sur un substrat supporté sur le support de substrat.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwdQ3x8HcJVnD0c1FwDAhwDHIMCQ1WcPMPUggI8nd2DQ729HNXcFQIDnUKDgHKufIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvhwfyMDIyMjA2NzM2NHQ2PiVAEAyU8nNw</recordid><startdate>20220929</startdate><enddate>20220929</enddate><creator>ASRANI, Soham Sunjay</creator><creator>YIEH, Ellie</creator><creator>CHEN, Erica</creator><creator>TANNOS, Jethro</creator><creator>CITLA, Bhargav Sridhar</creator><creator>NEMANI, Srinivas D</creator><creator>RUBNITZ, Joshua Alan</creator><creator>BEKIARIS, Nikolaos</creator><creator>BUCHBERGER, JR</creator><scope>EVB</scope></search><sort><creationdate>20220929</creationdate><title>METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE</title><author>ASRANI, Soham Sunjay ; YIEH, Ellie ; CHEN, Erica ; TANNOS, Jethro ; CITLA, Bhargav Sridhar ; NEMANI, Srinivas D ; RUBNITZ, Joshua Alan ; BEKIARIS, Nikolaos ; BUCHBERGER, JR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2022203763A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ASRANI, Soham Sunjay</creatorcontrib><creatorcontrib>YIEH, Ellie</creatorcontrib><creatorcontrib>CHEN, Erica</creatorcontrib><creatorcontrib>TANNOS, Jethro</creatorcontrib><creatorcontrib>CITLA, Bhargav Sridhar</creatorcontrib><creatorcontrib>NEMANI, Srinivas D</creatorcontrib><creatorcontrib>RUBNITZ, Joshua Alan</creatorcontrib><creatorcontrib>BEKIARIS, Nikolaos</creatorcontrib><creatorcontrib>BUCHBERGER, JR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASRANI, Soham Sunjay</au><au>YIEH, Ellie</au><au>CHEN, Erica</au><au>TANNOS, Jethro</au><au>CITLA, Bhargav Sridhar</au><au>NEMANI, Srinivas D</au><au>RUBNITZ, Joshua Alan</au><au>BEKIARIS, Nikolaos</au><au>BUCHBERGER, JR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE</title><date>2022-09-29</date><risdate>2022</risdate><abstract>Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.
La présente invention concerne des procédés et un appareil de traitement d'un substrat. Par exemple, un procédé de traitement d'un substrat consiste à introduire un précurseur contenant du silicium vaporisé à partir d'une alimentation en gaz dans un volume de traitement d'une chambre de traitement, à introduire un premier gaz de traitement à partir de l'alimentation en gaz dans le volume de traitement, à exciter le premier gaz de traitement à l'aide d'une puissance de source RF à un premier cycle de service pour générer une réaction avec le précurseur contenant du silicium vaporisé, et à fournir un mélange de gaz de traitement à partir de l'alimentation en gaz tout en fournissant une puissance de polarisation RF à un second cycle de service différent du premier cycle de service à un support de substrat disposé dans le volume de traitement pour déposer un film SiHx sur un substrat supporté sur le support de substrat.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE |
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