METHOD TO PREDICT METROLOGY OFFSET OF A SEMICONDUCTOR MANUFACTURING PROCESS

Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model (MOD), h...

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Bibliographische Detailangaben
Hauptverfasser:	DOS SANTOS GUZELLA, Thiago, SAPUTRA, Putra, ISHIBASHI, Masashi, SAHRAEIAN, Reza, BASTANI, Vahid, SANNO, Noriaki
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS REGULATING SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset (MTD). L'invention concerne un procédé pour déterminer un décalage de processus variant dans l'espace pour un processus lithographique, le décalage de processus variant dans l'espace (MTD) variant sur un substrat soumis au processus lithographique pour former une ou plusieurs structures sur celui-ci. Le procédé comprend : l'obtention d'un modèle formé (MOD), ayant été formé pour prédire des premières données de métrologie sur la base de secondes données de métrologie, les premières données de métrologie (OV) étant des données de métrologie variant dans l'espace qui se rapportent à un premier type de mesure desdites structures qui est une mesure du rendement, et lesdites secondes données de métrologie (PB) étant des données de métrologie variant dans l'espace qui se rapportent à un second type de mesure desdites structures et qui sont corrélées avec lesdites premières données de métrologie ; et l'utilisation dudit modèle pour obtenir ledit décalage de processus variant dans l'espace (MTD).