REDUCING AGENTS FOR ATOMIC LAYER DEPOSITION

Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound. La présente invention conc...

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Bibliographische Detailangaben
Hauptverfasser:	BHUYAN, Bhaskar Jyoti, KNISLEY, Thomas, SALY, Mark, KALUTARAGE, Lakmal C
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound. La présente invention concerne des procédés de formation d'un film métallique comportant un halogénure métallique avec un agent réducteur. L'agent réducteur comprend un élément du groupe IV contenant un composé hétérocyclique, un amorceur de radicaux, un alkylalane, une espèce de diborène et/ou un composé de Sn(II).