ELECTROSTATIC CHUCK WITH DIFFERENTIATED CERAMICS
Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The s...
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| description | Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.
La présente invention concerne des mandrins électrostatiques (ESC) destinés à des réacteurs ou à des chambres de traitement de plasma, ainsi que des procédés de fabrication de mandrins électrostatiques. Dans un exemple, un ensemble de support de substrat comprend une plaque inférieure en céramique contenant des éléments chauffants, la plaque inférieure en céramique composée d'alumine ayant une première pureté. L'ensemble de support de substrat comprend également une plaque supérieure en céramique contenant une électrode, la plaque supérieure en céramique composée d'alumine ayant une seconde pureté supérieure à la première pureté. Une couche de liaison se trouve entre la plaque supérieure en céramique et la plaque inférieure en céramique. La plaque supérieure en céramique est en contact direct avec la couche de liaison, et la couche de liaison est en contact direct avec la plaque inférieure en céramique. |
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La présente invention concerne des mandrins électrostatiques (ESC) destinés à des réacteurs ou à des chambres de traitement de plasma, ainsi que des procédés de fabrication de mandrins électrostatiques. Dans un exemple, un ensemble de support de substrat comprend une plaque inférieure en céramique contenant des éléments chauffants, la plaque inférieure en céramique composée d'alumine ayant une première pureté. L'ensemble de support de substrat comprend également une plaque supérieure en céramique contenant une électrode, la plaque supérieure en céramique composée d'alumine ayant une seconde pureté supérieure à la première pureté. Une couche de liaison se trouve entre la plaque supérieure en céramique et la plaque inférieure en céramique. La plaque supérieure en céramique est en contact direct avec la couche de liaison, et la couche de liaison est en contact direct avec la plaque inférieure en céramique.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220825&DB=EPODOC&CC=WO&NR=2022177691A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220825&DB=EPODOC&CC=WO&NR=2022177691A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARKHE, Vijay</creatorcontrib><title>ELECTROSTATIC CHUCK WITH DIFFERENTIATED CERAMICS</title><description>Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.
La présente invention concerne des mandrins électrostatiques (ESC) destinés à des réacteurs ou à des chambres de traitement de plasma, ainsi que des procédés de fabrication de mandrins électrostatiques. Dans un exemple, un ensemble de support de substrat comprend une plaque inférieure en céramique contenant des éléments chauffants, la plaque inférieure en céramique composée d'alumine ayant une première pureté. L'ensemble de support de substrat comprend également une plaque supérieure en céramique contenant une électrode, la plaque supérieure en céramique composée d'alumine ayant une seconde pureté supérieure à la première pureté. Une couche de liaison se trouve entre la plaque supérieure en céramique et la plaque inférieure en céramique. La plaque supérieure en céramique est en contact direct avec la couche de liaison, et la couche de liaison est en contact direct avec la plaque inférieure en céramique.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBw9XF1DgnyDw5xDPF0VnD2CHX2Vgj3DPFQcPF0c3MNcvUL8XQMcXVRcHYNcvT1dA7mYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkZGhubmZpaGjobGxKkCANTyJ1Y</recordid><startdate>20220825</startdate><enddate>20220825</enddate><creator>PARKHE, Vijay</creator><scope>EVB</scope></search><sort><creationdate>20220825</creationdate><title>ELECTROSTATIC CHUCK WITH DIFFERENTIATED CERAMICS</title><author>PARKHE, Vijay</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2022177691A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>PARKHE, Vijay</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARKHE, Vijay</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTROSTATIC CHUCK WITH DIFFERENTIATED CERAMICS</title><date>2022-08-25</date><risdate>2022</risdate><abstract>Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein, the ceramic bottom plate composed of alumina having a first purity. The substrate support assembly also includes a ceramic top plate having an electrode therein, the ceramic top plate composed of alumina having a second purity higher than the first purity. A bond layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the bond layer, and the bond layer is in direct contact with the ceramic bottom plate.
La présente invention concerne des mandrins électrostatiques (ESC) destinés à des réacteurs ou à des chambres de traitement de plasma, ainsi que des procédés de fabrication de mandrins électrostatiques. Dans un exemple, un ensemble de support de substrat comprend une plaque inférieure en céramique contenant des éléments chauffants, la plaque inférieure en céramique composée d'alumine ayant une première pureté. L'ensemble de support de substrat comprend également une plaque supérieure en céramique contenant une électrode, la plaque supérieure en céramique composée d'alumine ayant une seconde pureté supérieure à la première pureté. Une couche de liaison se trouve entre la plaque supérieure en céramique et la plaque inférieure en céramique. La plaque supérieure en céramique est en contact direct avec la couche de liaison, et la couche de liaison est en contact direct avec la plaque inférieure en céramique.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ELECTROSTATIC CHUCK WITH DIFFERENTIATED CERAMICS |
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