EPITAXIAL STRUCTURE, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL STRUCTURE

The present application relates to an epitaxial structure, a light-emitting device, and a method for manufacturing an epitaxial structure. The epitaxial structure comprises a buffer layer and a stress release layer, which are sequentially formed on a substrate, wherein the stress release layer comprises a first stress release layer, the first stress release layer is made of AlGaN, and the content of component Al accounts for 50%-90%. The first stress release layer is made of AlGaN with a relatively high content of component Al; and compressive stress can be introduced in advance, so as to realize high-quality crack-free GaN thin film epitaxial growth. The first stress release layer with a high content of component Al filters a large number of dislocations, and the introduced compressive stress makes part of the dislocations turn and disappear, such that a GaN thin film with a smooth and crack-free mirror surface and a low dislocation density is finally realized; and when the size of the substrate is relativel