SILICON CARBONITRIDE POLISHING COMPOSITION AND METHOD

A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control...

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Bibliographische Detailangaben
Hauptverfasser:	IVANOV, Roman A, LU, Lung-Tai, REISS, Brian
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control agent, and having a pH in a range from about 2 to about 7. L'invention concerne une composition de polissage chimico-mécanique pour polir un substrat comprenant une couche de carbonitrure de silicium, la composition comprenant, se composant essentiellement de, ou se composant d'un support liquide à base d'eau, de particules de silice colloïdale anionique dispersées dans le support liquide, d'un agent de régulation de topographie et ayant un pH dans une plage d'environ 2 à environ 7.