SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

Disclosed in the present invention are a semiconductor light-emitting element and a method for manufacturing same. The semiconductor light-emitting element comprises: a semiconductor epitaxial stack layer that comprises a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; a side wall that is formed on the edge of the first-conductivity-type semiconductor layer and the edge of the active layer; and a first step surface that is formed in the region, that does not overlap the active layer, of the second-conductivity-type semiconductor layer. The semiconductor light-emitting element is characterized in that the side wall extends and is connected to the first step surface to form a connection portion, and the side of the connection portion located on the first step surface has a roughening structure. According to the semiconductor light-