OHMIC-CONTACT-GATED CARBON NANOTUBE TRANSISTORS, FABRICATING METHODS AND APPLICATIONS OF SAME

One aspect of this invention relates to an ohmic-contact-gated transistor (OCGT), comprising a bottom gate electrode formed on a substrate; a first dielectric layer formed on the bottom gate electrode; a thin film formed of a semiconducting material on the first dielectric layer; a bottom contact fo...

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Bibliographische Detailangaben

Hauptverfasser:	SANGWAN, Vinod K, HERSAM, Mark C, BECK, Megan E, GAVIRIA ROJAS, William A
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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