SELECTIVE REMOVAL OF METAL OXIDE HARD MASKS

Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided....

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Bibliographische Detailangaben
Hauptverfasser:	YEO, Juhee, KIM, WonLae, CHAE, SeungHyun, HONG, Eric, HONG, SeongJin, YANG, JeongYeol
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided. L'invention concerne des compositions utiles pour la gravure sélective, à savoir , l'élimination, de masques durs d'oxyde métallique tels que l'oxyde de zirconium et l'oxyde d'hafnium, souvent utilisés comme masques durs dans des dispositifs microélectroniques, en présence d'autres matériaux tels que le polysilicium, le dioxyde de silicium, le nitrure de silicium et le tungstène.