SEALING RING STRUCTURE AND PREPARATION METHOD THEREFOR

A sealing ring structure and a preparation method therefor, which relate to the technical field of integrated circuits. The sealing ring structure comprises an enhanced high-electron-mobility transistor, a diode group and a resistor, which are manufactured by means of a semiconductor epitaxial layer, wherein the enhanced high-electron-mobility transistor is used for being annularly arranged on the periphery of a device region of a semiconductor device, and the diode group and the resistor are used for being arranged on the periphery of the device region; an anode of the diode group is used for being in metal connection with a first electrode of the semiconductor device, and a cathode thereof is used for being in metal connection with a first metal end of the resistor, and a second metal end of the resistor is used for being in metal connection with a second electrode of the semiconductor device; and a gate electrode of the enhanced high-electron-mobility transistor is in metal connection with the cathode of t