FURNACE TUBE-BASED DEPOSITION METHOD FOR THIN FILM AND SEMICONDUCTOR DEVICE

Disclosed in the present disclosure are a furnace tube-based deposition method for a thin film and a semiconductor device. The furnace tube-based deposition method for a thin film comprises: providing a deposition furnace tube, a processing cavity in the furnace tube being divided into multiple proc...

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1. Verfasser: HUANG, Qizan
Format: Patent
Sprache:chi ; eng ; fre
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Zusammenfassung:Disclosed in the present disclosure are a furnace tube-based deposition method for a thin film and a semiconductor device. The furnace tube-based deposition method for a thin film comprises: providing a deposition furnace tube, a processing cavity in the furnace tube being divided into multiple processing areas in a vertical direction, and multiple temperature controllers respectively having one-to-one correspondence to the multiple processing areas to respectively control the temperatures in the multiple processing areas; providing a substrate, performing a thin film deposition process on the substrate, and controlling the temperature controllers, such that set deposition temperatures in the processing areas from top to bottom gradually decrease in gradient; and performing an annealing process, and controlling the temperature controllers, such that set annealing temperatures in the processing areas from top to bottom gradually increase in gradient. La présente invention concerne un procédé de dépôt basé sur