PULSE SETTING METHOD FOR PHASE CHANGE MEMORY

A pulse setting method for a phase change memory. A phase change material of the phase change memory has an amorphous state and a crystallized state. The alternation of the two states of the phase change memory is achieved by means of an external pulse current, the directions of the pulse currents are alternately set, that is, a first pulse current having a transition from the crystallized state to the amorphous state and a second pulse current having a transition from the amorphous state to the crystallized state are set in reverse to each other. By using different poles of pulse current in a set state and a reset state, the phenomenon of atomic migration of the phase change material is alleviated, so as to improve the reliability of the phase change memory. Because different atoms have different electronic wind and electrostatic force directions, alternating the directions of the pulse currents can further avoid void formation, and the durability of the phase change memory is prolonged. Procédé de réglage d