THREE-DIMENSIONAL DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND METHODS OF FORMING THE SAME

Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) and corresponding methods. In an example, a film stack is formed on a substrate. The film stack includes multiple unit stacks, each having, sequentially, a first dielectric layer, a semiconductor layer, and a second...

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Bibliographische Detailangaben

Hauptverfasser:	FISHBURN, Fredrick, KANG, Changseok, KITAJIMA, Tomohiko, INGLE, Nitin K, LEE, Gill Yong, KANG, Sung Kwan
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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