METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL

METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL

Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the produc...

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Bibliographische Detailangaben
Hauptverfasser: CHU, Haifeng, HOSS, Jan, BUCHHOLZ, Florian, LOSSEN, Jan, MIHAILETCHI, Valentin Dan
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells. Procédé de structuration locale d'une couche de silicium, ledit procédé comprenant une étape de modification locale de la résistance à la gravure dans ladite couche de silicium et une étape ultérieure consistant à éliminer des régions non modifiées de ladite couche de silicium par gravure, et applications de ce procédé destinées à la production de cellules solaires.