COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL

A composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a a layer comprising silicon, the composition comprising: (a) 5 to 15 % by weight of an oxidizing agent; (b) 5 to 20 % by weight of an etchant comprising a source of fluoride ions; (c) 0.001...

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Bibliographische Detailangaben

Hauptverfasser:	FRISCHHUT, Sabine, LO, Chih Hui, LOPEZ VILLANUEVA, Francisco Javier, SHEN, Mary, KLIPP, Andreas
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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