SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NATARAJAN, Sanjay, KIM, Myungsun, COLOMBEAU, Benjamin, STOLFI, Michael
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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