SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source re...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NATARAJAN, Sanjay, KIM, Myungsun, COLOMBEAU, Benjamin, STOLFI, Michael
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device. L'invention concerne des dispositifs gate-all-around horizontaux et des procédés de fabrication de ceux-ci. Les dispositifs hGAA comprennent un matériau semi-conducteur coupé entre des régions de source et des régions de drain du dispositif. Le procédé comprend la gravure isotrope sélective de couches de matériau semi-conducteur entre des régions de source et des régions de drain d'un dispositif électronique.