PRODUCTION METHOD FOR DOPING MATERIAL SOLUTION FOR FILM FORMATION, PRODUCTION METHOD FOR LAYERED PRODUCT, DOPING MATERIAL SOLUTION FOR FILM FORMATION, AND SEMICONDUCTOR FILM

The production method for a doping material solution for film formation according to the present invention is characterized by comprising a step for producing a dopant precursor solution separately from a material for film formation, by firstly mixing a solute that contains an organic dopant compoun...

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Bibliographische Detailangaben
Hauptverfasser:	DANG Thai Giang, HASHIGAMI Hiroshi, SAKATSUME Takahiro, YASUOKA Tatsuya, KAWAHARAMURA Toshiyuki, WATABE Takenori
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The production method for a doping material solution for film formation according to the present invention is characterized by comprising a step for producing a dopant precursor solution separately from a material for film formation, by firstly mixing a solute that contains an organic dopant compound containing a halogen or contains a halide of a dopant, with a first solvent without mixing the solute with other solvents, and is characterized in that the first solvent is acidic. As a result, provided is a production method that is for a doping material solution for film formation and that enables stable formation of a high-quality thin film having superior electrical characteristics. Le procédé de production d'une solution de matériau dopant pour former un film selon la présente invention est caractérisé en ce qu'il comprend une étape de production d'une solution de précurseur de dopant séparément d'un matériau pour former un film, par mélange initial d'un soluté qui contient un composé dopant organique contenant un halogène ou qui contient un halogénure d'un dopant, avec un premier solvant sans mélanger le soluté avec d'autres solvants, et est caractérisé en ce que le premier solvant est acide. En conséquence, l'invention concerne un procédé de production qui est destiné à une solution de matériau dopant pour former un film et qui permet la formation stable d'une couche mince de haute qualité ayant des caractéristiques électriques supérieures. 本発明は、成膜用ドーピング原料溶液の製造方法であって、ハロゲンを含む有機ドーパント化合物又はドーパントのハロゲン化物を含む溶質を、他の溶媒とは混合することなく、先ず第１の溶媒と混合して、ドーパント前駆体溶液を成膜原料とは別途作製するステップを含み、前記第１の溶媒として酸性のものを用いることを特徴とする成膜用ドーピング原料溶液の製造方法である。これにより、優れた電気的特性を有する高品質な薄膜を安定的に形成可能とする成膜用ドーピング原料溶液の製造方法が提供される。