ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES
Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further i...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ROCKLEIN, Matthew N PETZ, Christopher W KELKAR, Sanket S KIM, Dojun KRAUS, Brenda D |
| description | Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
L'invention concerne des procédés, des appareils et des systèmes se rapportant à la formation d'un matériau barrière entre une électrode et un matériau diélectrique. Un procédé donné à titre d'exemple consiste : à former un matériau diélectrique sur un matériau d'électrode inférieure d'un nœud de stockage dans un procédé de fabrication de semi-conducteurs ; à former un matériau barrière sur le matériau diélectrique afin de réduire les lacunes en oxygène dans le matériau diélectrique ; et à former une électrode supérieure sur le matériau barrière. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2021262658A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2021262658A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2021262658A13</originalsourceid><addsrcrecordid>eNrjZLBz9XF1Dgnyd3HVd_GEsD2dFZwcg4I8XYMUfB1DXIM8HX0U3PyDgGxPfz8FRz8XheCQoFDnkNAg12AeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIf7m9kYGRoZGZkZmrhaGhMnCoAHiQrUw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES</title><source>esp@cenet</source><creator>ROCKLEIN, Matthew N ; PETZ, Christopher W ; KELKAR, Sanket S ; KIM, Dojun ; KRAUS, Brenda D</creator><creatorcontrib>ROCKLEIN, Matthew N ; PETZ, Christopher W ; KELKAR, Sanket S ; KIM, Dojun ; KRAUS, Brenda D</creatorcontrib><description>Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
L'invention concerne des procédés, des appareils et des systèmes se rapportant à la formation d'un matériau barrière entre une électrode et un matériau diélectrique. Un procédé donné à titre d'exemple consiste : à former un matériau diélectrique sur un matériau d'électrode inférieure d'un nœud de stockage dans un procédé de fabrication de semi-conducteurs ; à former un matériau barrière sur le matériau diélectrique afin de réduire les lacunes en oxygène dans le matériau diélectrique ; et à former une électrode supérieure sur le matériau barrière.</description><language>eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211230&DB=EPODOC&CC=WO&NR=2021262658A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211230&DB=EPODOC&CC=WO&NR=2021262658A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROCKLEIN, Matthew N</creatorcontrib><creatorcontrib>PETZ, Christopher W</creatorcontrib><creatorcontrib>KELKAR, Sanket S</creatorcontrib><creatorcontrib>KIM, Dojun</creatorcontrib><creatorcontrib>KRAUS, Brenda D</creatorcontrib><title>ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES</title><description>Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
L'invention concerne des procédés, des appareils et des systèmes se rapportant à la formation d'un matériau barrière entre une électrode et un matériau diélectrique. Un procédé donné à titre d'exemple consiste : à former un matériau diélectrique sur un matériau d'électrode inférieure d'un nœud de stockage dans un procédé de fabrication de semi-conducteurs ; à former un matériau barrière sur le matériau diélectrique afin de réduire les lacunes en oxygène dans le matériau diélectrique ; et à former une électrode supérieure sur le matériau barrière.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBz9XF1Dgnyd3HVd_GEsD2dFZwcg4I8XYMUfB1DXIM8HX0U3PyDgGxPfz8FRz8XheCQoFDnkNAg12AeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIf7m9kYGRoZGZkZmrhaGhMnCoAHiQrUw</recordid><startdate>20211230</startdate><enddate>20211230</enddate><creator>ROCKLEIN, Matthew N</creator><creator>PETZ, Christopher W</creator><creator>KELKAR, Sanket S</creator><creator>KIM, Dojun</creator><creator>KRAUS, Brenda D</creator><scope>EVB</scope></search><sort><creationdate>20211230</creationdate><title>ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES</title><author>ROCKLEIN, Matthew N ; PETZ, Christopher W ; KELKAR, Sanket S ; KIM, Dojun ; KRAUS, Brenda D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021262658A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ROCKLEIN, Matthew N</creatorcontrib><creatorcontrib>PETZ, Christopher W</creatorcontrib><creatorcontrib>KELKAR, Sanket S</creatorcontrib><creatorcontrib>KIM, Dojun</creatorcontrib><creatorcontrib>KRAUS, Brenda D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROCKLEIN, Matthew N</au><au>PETZ, Christopher W</au><au>KELKAR, Sanket S</au><au>KIM, Dojun</au><au>KRAUS, Brenda D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES</title><date>2021-12-30</date><risdate>2021</risdate><abstract>Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
L'invention concerne des procédés, des appareils et des systèmes se rapportant à la formation d'un matériau barrière entre une électrode et un matériau diélectrique. Un procédé donné à titre d'exemple consiste : à former un matériau diélectrique sur un matériau d'électrode inférieure d'un nœud de stockage dans un procédé de fabrication de semi-conducteurs ; à former un matériau barrière sur le matériau diélectrique afin de réduire les lacunes en oxygène dans le matériau diélectrique ; et à former une électrode supérieure sur le matériau barrière.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre |
| recordid | cdi_epo_espacenet_WO2021262658A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ELECTRODE/DIELECTRIC BARRIER MATERIAL FORMATION AND STRUCTURES |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T04%3A45%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ROCKLEIN,%20Matthew%20N&rft.date=2021-12-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2021262658A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |