LIGHT-EMITTING DIODE

A light-emitting diode, which at least comprises: a semiconductor epitaxial stack which is provided with a first surface and a second surface that are opposite one another; a DBR reflective layer (108), which is disposed above the second surface of the semiconductor epitaxial stack, and comprises M groups of material layer pairs composed by alternately stacking a types of material layers having different refractive indices, wherein 2≤a≤6. Said diode is characterized in that: there are N groups of material layer pairs among the M groups of material layer pairs of the DBR reflective layer (108), the roughness of the interface between the a types of material layers in the N groups of material layer pairs is greater than the roughness of the interface between the a types of material layers in the remaining (M-N) groups of material layer pairs, and M>N≥1. By means of roughening the interface between the material layers within the DBR reflective layer (108), the light-emitting efficiency can be increased. Meanwhile