FLUORINE-FREE TUNGSTEN ALD FOR DIELECTRIC SELECTIVITY IMPROVEMENT

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then conv...

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Bibliographische Detailangaben
Hauptverfasser:	SRIRAM, Mandyam, CHEN, Shih Chung, SHEN, Chenfei, REN, He, YOSHIDA, Naomi, LIN, Chi-Chou, CHEN, Wen Ting, FISHER, Ilanit, WU, Kedi, GANDIKOTA, Srinivas
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition. L'invention concerne des procédés destinés à former sélectivement des pellicules de tungstène métallique sur une surface conductrice relativement à une surface diélectrique. Un substrat est exposé à une première condition de traitement pour déposer une pellicule contenant du tungstène qui est un substrat dépourvu de tungstène métallique. La pellicule contenant du tungstène est alors convertie en une pellicule de tungstène métallique par exposition à une deuxième condition de traitement.