SPUTTERING TARGET AND OPTICAL FUNCTIONAL FILM

A sputtering target comprising a first component including a carbide of at least one selected from W and Ta and a second component of an oxide of at least one selected from Si, In, Y, Nb, V, Zn, Zr, Al, B, Mo, and W, wherein the total contained amount of W and Ta in the first component is within a r...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KANEKO Daisuke, OKANO Shin, UMEMOTO Keita, SUGIUCHI Yukiya, OHTOMO Takeshi
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A sputtering target comprising a first component including a carbide of at least one selected from W and Ta and a second component of an oxide of at least one selected from Si, In, Y, Nb, V, Zn, Zr, Al, B, Mo, and W, wherein the total contained amount of W and Ta in the first component is within a range of 10-35 atom%. Une cible de pulvérisation cathodique comprend un premier composant comprenant un carbure d'au moins un élément choisi parmi W et Ta et un second composant d'un oxyde d'au moins un élément choisi parmi Si, In, Y, Nb, V, Zn, Zr, Al, B, Mo et W, la quantité totale contenue de W et de Ta dans le premier composant étant comprise dans une plage de 10-35 % atomiques. このスパッタリングターゲットは、Ｗ，Ｔａから選択される一種又は二種の炭化物からなる第１成分と、Ｓｉ，Ｉｎ，Ｙ，Ｎｂ，Ｖ，Ｚｎ，Ｚｒ，Ａｌ，Ｂ，Ｍｏ，Ｗから選択される一種又は二種以上の酸化物からなる第２成分と、を含有し、前記第１成分内のＷ，Ｔａの合計含有量が１０原子％以上３５原子％以下の範囲内とされている。