THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AUXILLIARY SUPPORT PILLAR STRUCTURES AND METHOD OF MAKING THE SAME

A three-dimensional memory device includes a first-tier structure located over a substrate and including a first alternating stack of first insulating layers and first electrically conductive layers, a second-tier structure located over the first-tier structure and including a second alternating sta...

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Bibliographische Detailangaben

Hauptverfasser:	HINOUE, Tatsuya, TERAHARA, Masanori, KANAZAWA, Junpei, SHIMODA, Atsushi, KAJIWARA, Kengo
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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