THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, DISPLAY PANEL, AND DISPLAY DEVICE

Disclosed in the present application are a thin film transistor, a manufacturing method therefor, a display panel, and a display device. The thin film transistor comprises a base substrate, and a metal conductive material, a first silicon-based intermediate layer and a first gate insulating layer sequentially located on the base substrate, wherein the first silicon-based intermediate layer is bonded to the metal conductive material and the first gate insulating layer by means of chemical bonds. Providing a first silicon-based intermediate layer between a metal conductive material and a first gate insulating layer effectively improves an adhesive force between the metal conductive material and the first gate insulating layer, and prevents the metal conductive material and the first gate insulating layer from bulging due to poor adhesion under internal stress of the film layer. In addition, chemical bonds between the first silicon-based intermediate layer and the metal conductive material can effectively pin at