MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Disclosed are a magnetic structure in a semiconductor device, and the semiconductor device. The magnetic structure is arranged outside a reaction chamber of the semiconductor device in a surrounding manner, and comprises: an annular support member, a plurality of angle adjustment assemblies, and a p...
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| creator | YU, Zhenduo |
| description | Disclosed are a magnetic structure in a semiconductor device, and the semiconductor device. The magnetic structure is arranged outside a reaction chamber of the semiconductor device in a surrounding manner, and comprises: an annular support member, a plurality of angle adjustment assemblies, and a plurality of magnetic members, wherein the annular support member is arranged surrounding the reaction chamber of the semiconductor device; the plurality of angle adjustment assemblies are connected to the annular support member and are distributed in the circumferential direction of the annular support member; the magnetic members are correspondingly connected to the angle adjustment assemblies on a one-to-one basis; and each of the angle adjustment assemblies can fix the corresponding magnetic member on the annular support member and is used for adjusting the direction of the magnetic line of force of the magnetic member and the included angle between the magnetic line of force of the magnetic member and the axis |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2021204012A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2021204012A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2021204012A13</originalsourceid><addsrcrecordid>eNrjZHDxdXT3cw3xdFYIDgkKdQ4JDXJV8PRTCHb19XT293MBivgHKbi4hnk6u-ooOPq5YJXhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkaGRgYmBoZGjobGxKkCABR_LKQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>YU, Zhenduo</creator><creatorcontrib>YU, Zhenduo</creatorcontrib><description>Disclosed are a magnetic structure in a semiconductor device, and the semiconductor device. The magnetic structure is arranged outside a reaction chamber of the semiconductor device in a surrounding manner, and comprises: an annular support member, a plurality of angle adjustment assemblies, and a plurality of magnetic members, wherein the annular support member is arranged surrounding the reaction chamber of the semiconductor device; the plurality of angle adjustment assemblies are connected to the annular support member and are distributed in the circumferential direction of the annular support member; the magnetic members are correspondingly connected to the angle adjustment assemblies on a one-to-one basis; and each of the angle adjustment assemblies can fix the corresponding magnetic member on the annular support member and is used for adjusting the direction of the magnetic line of force of the magnetic member and the included angle between the magnetic line of force of the magnetic member and the axis</description><language>chi ; eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211014&DB=EPODOC&CC=WO&NR=2021204012A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211014&DB=EPODOC&CC=WO&NR=2021204012A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU, Zhenduo</creatorcontrib><title>MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><description>Disclosed are a magnetic structure in a semiconductor device, and the semiconductor device. The magnetic structure is arranged outside a reaction chamber of the semiconductor device in a surrounding manner, and comprises: an annular support member, a plurality of angle adjustment assemblies, and a plurality of magnetic members, wherein the annular support member is arranged surrounding the reaction chamber of the semiconductor device; the plurality of angle adjustment assemblies are connected to the annular support member and are distributed in the circumferential direction of the annular support member; the magnetic members are correspondingly connected to the angle adjustment assemblies on a one-to-one basis; and each of the angle adjustment assemblies can fix the corresponding magnetic member on the annular support member and is used for adjusting the direction of the magnetic line of force of the magnetic member and the included angle between the magnetic line of force of the magnetic member and the axis</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDxdXT3cw3xdFYIDgkKdQ4JDXJV8PRTCHb19XT293MBivgHKbi4hnk6u-ooOPq5YJXhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkaGRgYmBoZGjobGxKkCABR_LKQ</recordid><startdate>20211014</startdate><enddate>20211014</enddate><creator>YU, Zhenduo</creator><scope>EVB</scope></search><sort><creationdate>20211014</creationdate><title>MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><author>YU, Zhenduo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021204012A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YU, Zhenduo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU, Zhenduo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE</title><date>2021-10-14</date><risdate>2021</risdate><abstract>Disclosed are a magnetic structure in a semiconductor device, and the semiconductor device. The magnetic structure is arranged outside a reaction chamber of the semiconductor device in a surrounding manner, and comprises: an annular support member, a plurality of angle adjustment assemblies, and a plurality of magnetic members, wherein the annular support member is arranged surrounding the reaction chamber of the semiconductor device; the plurality of angle adjustment assemblies are connected to the annular support member and are distributed in the circumferential direction of the annular support member; the magnetic members are correspondingly connected to the angle adjustment assemblies on a one-to-one basis; and each of the angle adjustment assemblies can fix the corresponding magnetic member on the annular support member and is used for adjusting the direction of the magnetic line of force of the magnetic member and the included angle between the magnetic line of force of the magnetic member and the axis</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | MAGNETIC STRUCTURE IN SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
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