ETCHING METHOD AND ETCHING DEVICE

According to the present invention, a silicon film that is formed on the surface of a substrate is etched by supplying a fluorine gas and an amine gas to the substrate. Selon la présente invention, un film de silicium qui est formé sur la surface d'un substrat est gravé en exposant le substrat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ORII Takehiko, TAKAHASHI Nobuhiro
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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