EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME
An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary...
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| description | An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary chamber being provided above the main chamber; the evacuation method comprises the following steps: S1, sequentially connecting a main valve and a main pump to the main chamber by using a first pipeline, and closing the main valve and the main pump; S2, sequentially connecting an auxiliary valve and an auxiliary pump to the auxiliary chamber by using a second pipeline, and connecting a quick charging valve to the main chamber or the auxiliary chamber by using a third pipeline; opening the auxiliary valve and the auxiliary pump to extract air from the single-crystal furnace, and controlling the quick charging valve to introduce inert gas into the single-crystal furnace. The described evacuation method can gradually |
| format | Patent |
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The described evacuation method can gradually</description><language>chi ; eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BLASTING ; CHEMISTRY ; CRYSTAL GROWTH ; HEATING ; LIGHTING ; MECHANICAL ENGINEERING ; METALLURGY ; PIPE-LINE SYSTEMS ; PIPE-LINES ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; STORING OF DISTRIBUTING GASES OR LIQUIDS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WEAPONS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210715&DB=EPODOC&CC=WO&NR=2021139228A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210715&DB=EPODOC&CC=WO&NR=2021139228A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAN, Junzhao</creatorcontrib><title>EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME</title><description>An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary chamber being provided above the main chamber; the evacuation method comprises the following steps: S1, sequentially connecting a main valve and a main pump to the main chamber by using a first pipeline, and closing the main valve and the main pump; S2, sequentially connecting an auxiliary valve and an auxiliary pump to the auxiliary chamber by using a second pipeline, and connecting a quick charging valve to the main chamber or the auxiliary chamber by using a third pipeline; opening the auxiliary valve and the auxiliary pump to extract air from the single-crystal furnace, and controlling the quick charging valve to introduce inert gas into the single-crystal furnace. The described evacuation method can gradually</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BLASTING</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>HEATING</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>PIPE-LINE SYSTEMS</subject><subject>PIPE-LINES</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>STORING OF DISTRIBUTING GASES OR LIQUIDS</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqdzk0KwjAQBeBuXIh6hwHXBZtudBmTqQ2kSchP1VUpEleihXo172eUHkBcDMODb3gzz17YUhaoF1pBg77WHBg1dC8RdAXGYovKC3UAHpwHPBmp3ccKBabWLo0NLufaIAeXnMSc2bPzVKYoBUvUWM0D-zZQxf85mx4LHwmONrjMZtf-NsbVtBfZukLP6jwOjy6OQ3-J9_jsjppsSFGUO0K2tCh_U29DQEyp</recordid><startdate>20210715</startdate><enddate>20210715</enddate><creator>WAN, Junzhao</creator><scope>EVB</scope></search><sort><creationdate>20210715</creationdate><title>EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME</title><author>WAN, Junzhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021139228A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2021</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BLASTING</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>HEATING</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>PIPE-LINE SYSTEMS</topic><topic>PIPE-LINES</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>STORING OF DISTRIBUTING GASES OR LIQUIDS</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>WAN, Junzhao</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WAN, Junzhao</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME</title><date>2021-07-15</date><risdate>2021</risdate><abstract>An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary chamber being provided above the main chamber; the evacuation method comprises the following steps: S1, sequentially connecting a main valve and a main pump to the main chamber by using a first pipeline, and closing the main valve and the main pump; S2, sequentially connecting an auxiliary valve and an auxiliary pump to the auxiliary chamber by using a second pipeline, and connecting a quick charging valve to the main chamber or the auxiliary chamber by using a third pipeline; opening the auxiliary valve and the auxiliary pump to extract air from the single-crystal furnace, and controlling the quick charging valve to introduce inert gas into the single-crystal furnace. The described evacuation method can gradually</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng ; fre |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CHEMISTRY CRYSTAL GROWTH HEATING LIGHTING MECHANICAL ENGINEERING METALLURGY PIPE-LINE SYSTEMS PIPE-LINES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH STORING OF DISTRIBUTING GASES OR LIQUIDS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS |
| title | EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME |
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