EVACUATION METHOD CAPABLE OF PREVENTING DUST EXPLOSION IN PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION AND PHOSPHORUS-DOPED SINGLE-CRYSTAL SILICON PRODUCTION METHOD USING SAME
An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary...
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Format: | Patent |
Sprache: | chi ; eng ; fre |
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Zusammenfassung: | An evacuation method capable of preventing dust explosion in phosphorus-doped single-crystal silicon production, a single-crystal furnace for producing phosphorus-doped single-crystal silicon comprising a main chamber and an auxiliary chamber which are in communication with each other, the auxiliary chamber being provided above the main chamber; the evacuation method comprises the following steps: S1, sequentially connecting a main valve and a main pump to the main chamber by using a first pipeline, and closing the main valve and the main pump; S2, sequentially connecting an auxiliary valve and an auxiliary pump to the auxiliary chamber by using a second pipeline, and connecting a quick charging valve to the main chamber or the auxiliary chamber by using a third pipeline; opening the auxiliary valve and the auxiliary pump to extract air from the single-crystal furnace, and controlling the quick charging valve to introduce inert gas into the single-crystal furnace. The described evacuation method can gradually |
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