METHOD FOR MANUFACTURING TWO-DIMENSIONAL-MATERIAL-BASED FLEXIBLE FERROELECTRIC STORAGE UNIT
Disclosed is a method for manufacturing a two-dimensional-material-based flexible ferroelectric storage unit. The manufacturing method comprises: stripping a WTe2 thin film (20) from a tungsten ditelluride WTe2 crystal and transferring same onto a flexible membrane (10) (S100); forming a source elec...
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| Format: | Patent |
| Sprache: | chi ; eng ; fre |
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| Zusammenfassung: | Disclosed is a method for manufacturing a two-dimensional-material-based flexible ferroelectric storage unit. The manufacturing method comprises: stripping a WTe2 thin film (20) from a tungsten ditelluride WTe2 crystal and transferring same onto a flexible membrane (10) (S100); forming a source electrode (30) and a drain electrode (40) on the surface of the WTe2 thin film (20) (S200); forming a polyvinylidene fluoride (PVDF)-based ferroelectric thin film (50) on the source electrode (30), the drain electrode (40) and the WTe2 thin film (20) (S300); and forming a gate electrode (60) on the PVDF-based ferroelectric thin film (50) (S400).
L'invention concerne un procédé de fabrication d'une unité de stockage ferroélectrique souple à base d'un matériau bidimensionnel. Le procédé de fabrication consiste : à extraire un film mince de WTe2(20) d'un cristal de ditellurure de tungstène de WTe2 et à transférer ledit film mince sur une membrane souple (10) (S100) ; à former une électrode source (30) et une électrode dra |
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