MULTI-ZONE ELECTROSTATIC CHUCK
Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. T...
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| creator | MUTYALA, Madhu Santosh Kumar KAMATH, Sanjay PADHI, Deenesh |
| description | Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.
Des chambres de traitement de semi-conducteur données à titre d'exemple peuvent comprendre un socle comprenant un plateau conçu pour supporter un substrat semi-conducteur sur une surface du plateau. Les chambres peuvent comprendre un premier treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que premier treillis de retenue. Le premier treillis conducteur peut s'étendre radialement sur le plateau. Les chambres peuvent comprendre un second treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que second treillis de retenue. Le second treillis conducteur peut être caractérisé par une forme annulaire. Le second treillis conducteur peut être disposé entre le premier treillis conducteur et la surface du plateau. |
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Des chambres de traitement de semi-conducteur données à titre d'exemple peuvent comprendre un socle comprenant un plateau conçu pour supporter un substrat semi-conducteur sur une surface du plateau. Les chambres peuvent comprendre un premier treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que premier treillis de retenue. Le premier treillis conducteur peut s'étendre radialement sur le plateau. Les chambres peuvent comprendre un second treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que second treillis de retenue. Le second treillis conducteur peut être caractérisé par une forme annulaire. Le second treillis conducteur peut être disposé entre le premier treillis conducteur et la surface du plateau.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=WO&NR=2021126857A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=WO&NR=2021126857A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MUTYALA, Madhu Santosh Kumar</creatorcontrib><creatorcontrib>KAMATH, Sanjay</creatorcontrib><creatorcontrib>PADHI, Deenesh</creatorcontrib><title>MULTI-ZONE ELECTROSTATIC CHUCK</title><description>Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.
Des chambres de traitement de semi-conducteur données à titre d'exemple peuvent comprendre un socle comprenant un plateau conçu pour supporter un substrat semi-conducteur sur une surface du plateau. Les chambres peuvent comprendre un premier treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que premier treillis de retenue. Le premier treillis conducteur peut s'étendre radialement sur le plateau. Les chambres peuvent comprendre un second treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que second treillis de retenue. Le second treillis conducteur peut être caractérisé par une forme annulaire. Le second treillis conducteur peut être disposé entre le premier treillis conducteur et la surface du plateau.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDzDfUJ8dSN8vdzVXD1cXUOCfIPDnEM8XRWcPYIdfbmYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkaGhkZmFqbmjobGxKkCAEsNInE</recordid><startdate>20210624</startdate><enddate>20210624</enddate><creator>MUTYALA, Madhu Santosh Kumar</creator><creator>KAMATH, Sanjay</creator><creator>PADHI, Deenesh</creator><scope>EVB</scope></search><sort><creationdate>20210624</creationdate><title>MULTI-ZONE ELECTROSTATIC CHUCK</title><author>MUTYALA, Madhu Santosh Kumar ; KAMATH, Sanjay ; PADHI, Deenesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021126857A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MUTYALA, Madhu Santosh Kumar</creatorcontrib><creatorcontrib>KAMATH, Sanjay</creatorcontrib><creatorcontrib>PADHI, Deenesh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MUTYALA, Madhu Santosh Kumar</au><au>KAMATH, Sanjay</au><au>PADHI, Deenesh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTI-ZONE ELECTROSTATIC CHUCK</title><date>2021-06-24</date><risdate>2021</risdate><abstract>Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.
Des chambres de traitement de semi-conducteur données à titre d'exemple peuvent comprendre un socle comprenant un plateau conçu pour supporter un substrat semi-conducteur sur une surface du plateau. Les chambres peuvent comprendre un premier treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que premier treillis de retenue. Le premier treillis conducteur peut s'étendre radialement sur le plateau. Les chambres peuvent comprendre un second treillis conducteur incorporé à l'intérieur du plateau et conçu pour fonctionner en tant que second treillis de retenue. Le second treillis conducteur peut être caractérisé par une forme annulaire. Le second treillis conducteur peut être disposé entre le premier treillis conducteur et la surface du plateau.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONVERSION OR DISTRIBUTION OF ELECTRIC POWER DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | MULTI-ZONE ELECTROSTATIC CHUCK |
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