OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD

An oxide sputtering target comprising, as a metal component, an oxide that contains zirconium, silicon, and indium, wherein the maximum particle size in a zirconium oxide phase (11) is set to 10 µm or less. Cible de pulvérisation d'oxyde comprenant, en tant que composant métallique, un oxyde qu...

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Bibliographische Detailangaben
Hauptverfasser:	UMEMOTO Keita, MUTSUDA Yuya
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	An oxide sputtering target comprising, as a metal component, an oxide that contains zirconium, silicon, and indium, wherein the maximum particle size in a zirconium oxide phase (11) is set to 10 µm or less. Cible de pulvérisation d'oxyde comprenant, en tant que composant métallique, un oxyde qui contient du zirconium, du silicium et de l'indium, la taille de particule maximale dans une phase d'oxyde de zirconium (11) étant fixée à 10 µm ou moins. この酸化物スパッタリングターゲットは、金属成分として、ジルコニウム、ケイ素およびインジウムを含有した酸化物からなり、酸化ジルコニウム相（１１）の最大粒径が１０μｍ以下とされている。