METHODS TO ENABLE SEAMLESS HIGH QUALITY GAPFILL

Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remo...

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Bibliographische Detailangaben
Hauptverfasser:	JEON, Eli, ABEL, Joseph R, AGNEW, Douglas Walter
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remove seams within the deposited oxide material. L'invention concerne des procédés et des appareils pour déposer un matériau dans des éléments à rapport de forme élevé. Les procédés comprennent le dépôt d'un matériau d'oxyde à l'aide d'une chimie oxydante contenant de l'hydrogène. Les procédés peuvent également comprendre le traitement thermique d'un matériau d'oxyde déposé en présence d'hydrogène pour éliminer les soudures à l'intérieur du matériau d'oxyde déposé.