NON-POLAR III-NITRIDE BINARY AND TERNARY MATERIALS, METHOD FOR OBTAINING THEREOF AND USES

The invention is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar III-Nitride nanopillars. Besides, the invention also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-...

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Bibliographische Detailangaben
Hauptverfasser:	ALBERT, Steven, FERNANDO SAAVEDRA, Amalia Luisa, CALLEJA PARDO, Enrique, BENGOECHEA ENCABO, Ana María, XIE, Mengyao, SÁNCHEZ GARCÍA, Miguel Angel, LÓPEZ-ROMERO MORALEDA, David
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention is aimed at a method for obtaining non-polar III-Nitride compact layers by coalescence of an ordered-array of etched non-polar III-Nitride nanopillars. Besides, the invention also relates to the non-polar III-Nitride binary and ternary compact, continuous (2D) films, layers, or pseudo-substrates, obtainable by means of the disclosed method and having advantageous properties. The invention also includes a specific group of non-polar III-Nitride compact, continuous (2D) films or layers, having one of the components selected from the group consisting of In, Al and both elements, enfolding ordered arrays of non- polar III-Nitride nano-crystals, regardless the method for obtaining thereof, said film or layer being one of the groups consisting of: non-polar InN, non-polar AlN, non-polar GaxAl1-xN, non-polar InxAl1-xN and non-polar GaxIn1-xN, wherein 0