CHAMBER CONFIGURATIONS FOR CONTROLLED DEPOSITION
Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket...
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| creator | RAJ, Daemian Raj Benjamin SRIVASTAVA, Shailendra CHICHKANOFF, Greg JIANG, Zhijun MA, Qiang KESHRI, Abhigyan BALASUBRAMANIAN, Ganesh CHEN, Yue JORAPUR, Nikhil Sudhindrarao PADHI, Deenesh ADDEPALLI, Sai Susmita HAN, Xinhai |
| description | Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.
L'invention concerne des chambres de traitement de semi-conducteurs qui, par exemple, peuvent comprendre une pomme de douche. Les chambres peuvent également comprendre un support de substrat caractérisé par une première surface faisant face à la pomme de douche. La première surface peut être configurée pour supporter un substrat semi-conducteur. Le support de substrat peut délimiter une poche en retrait située de façon centrale à l'intérieur de la première surface. La poche en retrait peut être délimitée par une paroi radiale externe caractérisée par une hauteur à partir de la première surface à l'intérieur de la poche en retrait qui est supérieure ou égale à environ 150 % d'une épaisseur du substrat semi-conducteur. |
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L'invention concerne des chambres de traitement de semi-conducteurs qui, par exemple, peuvent comprendre une pomme de douche. Les chambres peuvent également comprendre un support de substrat caractérisé par une première surface faisant face à la pomme de douche. La première surface peut être configurée pour supporter un substrat semi-conducteur. Le support de substrat peut délimiter une poche en retrait située de façon centrale à l'intérieur de la première surface. La poche en retrait peut être délimitée par une paroi radiale externe caractérisée par une hauteur à partir de la première surface à l'intérieur de la poche en retrait qui est supérieure ou égale à environ 150 % d'une épaisseur du substrat semi-conducteur.</description><language>eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210218&DB=EPODOC&CC=WO&NR=2021030445A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210218&DB=EPODOC&CC=WO&NR=2021030445A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAJ, Daemian Raj Benjamin</creatorcontrib><creatorcontrib>SRIVASTAVA, Shailendra</creatorcontrib><creatorcontrib>CHICHKANOFF, Greg</creatorcontrib><creatorcontrib>JIANG, Zhijun</creatorcontrib><creatorcontrib>MA, Qiang</creatorcontrib><creatorcontrib>KESHRI, Abhigyan</creatorcontrib><creatorcontrib>BALASUBRAMANIAN, Ganesh</creatorcontrib><creatorcontrib>CHEN, Yue</creatorcontrib><creatorcontrib>JORAPUR, Nikhil Sudhindrarao</creatorcontrib><creatorcontrib>PADHI, Deenesh</creatorcontrib><creatorcontrib>ADDEPALLI, Sai Susmita</creatorcontrib><creatorcontrib>HAN, Xinhai</creatorcontrib><title>CHAMBER CONFIGURATIONS FOR CONTROLLED DEPOSITION</title><description>Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.
L'invention concerne des chambres de traitement de semi-conducteurs qui, par exemple, peuvent comprendre une pomme de douche. Les chambres peuvent également comprendre un support de substrat caractérisé par une première surface faisant face à la pomme de douche. La première surface peut être configurée pour supporter un substrat semi-conducteur. Le support de substrat peut délimiter une poche en retrait située de façon centrale à l'intérieur de la première surface. La poche en retrait peut être délimitée par une paroi radiale externe caractérisée par une hauteur à partir de la première surface à l'intérieur de la poche en retrait qui est supérieure ou égale à environ 150 % d'une épaisseur du substrat semi-conducteur.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBw9nD0dXINUnD293PzdA8Ncgzx9PcLVnDzBwuFBPn7-Li6KLi4BvgHe4KkeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGRoYGxgYmJqaOhMXGqAOJqJ2k</recordid><startdate>20210218</startdate><enddate>20210218</enddate><creator>RAJ, Daemian Raj Benjamin</creator><creator>SRIVASTAVA, Shailendra</creator><creator>CHICHKANOFF, Greg</creator><creator>JIANG, Zhijun</creator><creator>MA, Qiang</creator><creator>KESHRI, Abhigyan</creator><creator>BALASUBRAMANIAN, Ganesh</creator><creator>CHEN, Yue</creator><creator>JORAPUR, Nikhil Sudhindrarao</creator><creator>PADHI, Deenesh</creator><creator>ADDEPALLI, Sai Susmita</creator><creator>HAN, Xinhai</creator><scope>EVB</scope></search><sort><creationdate>20210218</creationdate><title>CHAMBER CONFIGURATIONS FOR CONTROLLED DEPOSITION</title><author>RAJ, Daemian Raj Benjamin ; SRIVASTAVA, Shailendra ; CHICHKANOFF, Greg ; JIANG, Zhijun ; MA, Qiang ; KESHRI, Abhigyan ; BALASUBRAMANIAN, Ganesh ; CHEN, Yue ; JORAPUR, Nikhil Sudhindrarao ; PADHI, Deenesh ; ADDEPALLI, Sai Susmita ; HAN, Xinhai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021030445A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RAJ, Daemian Raj Benjamin</creatorcontrib><creatorcontrib>SRIVASTAVA, Shailendra</creatorcontrib><creatorcontrib>CHICHKANOFF, Greg</creatorcontrib><creatorcontrib>JIANG, Zhijun</creatorcontrib><creatorcontrib>MA, Qiang</creatorcontrib><creatorcontrib>KESHRI, Abhigyan</creatorcontrib><creatorcontrib>BALASUBRAMANIAN, Ganesh</creatorcontrib><creatorcontrib>CHEN, Yue</creatorcontrib><creatorcontrib>JORAPUR, Nikhil Sudhindrarao</creatorcontrib><creatorcontrib>PADHI, Deenesh</creatorcontrib><creatorcontrib>ADDEPALLI, Sai Susmita</creatorcontrib><creatorcontrib>HAN, Xinhai</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAJ, Daemian Raj Benjamin</au><au>SRIVASTAVA, Shailendra</au><au>CHICHKANOFF, Greg</au><au>JIANG, Zhijun</au><au>MA, Qiang</au><au>KESHRI, Abhigyan</au><au>BALASUBRAMANIAN, Ganesh</au><au>CHEN, Yue</au><au>JORAPUR, Nikhil Sudhindrarao</au><au>PADHI, Deenesh</au><au>ADDEPALLI, Sai Susmita</au><au>HAN, Xinhai</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CHAMBER CONFIGURATIONS FOR CONTROLLED DEPOSITION</title><date>2021-02-18</date><risdate>2021</risdate><abstract>Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.
L'invention concerne des chambres de traitement de semi-conducteurs qui, par exemple, peuvent comprendre une pomme de douche. Les chambres peuvent également comprendre un support de substrat caractérisé par une première surface faisant face à la pomme de douche. La première surface peut être configurée pour supporter un substrat semi-conducteur. Le support de substrat peut délimiter une poche en retrait située de façon centrale à l'intérieur de la première surface. La poche en retrait peut être délimitée par une paroi radiale externe caractérisée par une hauteur à partir de la première surface à l'intérieur de la poche en retrait qui est supérieure ou égale à environ 150 % d'une épaisseur du substrat semi-conducteur.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CHAMBER CONFIGURATIONS FOR CONTROLLED DEPOSITION |
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