THERMAL ALD OF METAL OXIDE USING ISSG

A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H2 and O2 to form radical species which react with metal precursors to form metal oxides. L'inven...

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Bibliographische Detailangaben
1. Verfasser:	SATO, Tatsuya E
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H2 and O2 to form radical species which react with metal precursors to form metal oxides. L'invention concerne un procédé de formation d'un oxyde métallique. Les procédés sont mis en oeuvre par dépôt de couche atomique sans utiliser de plasma. Les procédés utilisent un substrat chauffé exposé à un flux conjoint de H2 et O2 pour former des espèces radicalaires qui réagissent avec des précurseurs métalliques pour former des oxydes métalliques.