BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING BULK GAN CRYSTAL

In order to provide a bulk GaN crystal in which the degree of curvature of the c-plane is reduced, the present invention provides a bulk GaN crystal having a principal surface selected from a surface that is inclined 0 degrees to 10 degrees from the (0001) crystal plane and a surface that is incline...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MIKAWA, Yutaka, OKANO, Tetsuo
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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