SEMICONDUCTOR DEVICE INTERCONNECTION SYSTEMS AND METHODS

Techniques are disclosed for facilitating interconnecting semiconductor devices (305, 310), related systems and devices are also disclosed. In one example, a method of interconnecting a first substrate (320) to a second substrate (335) is provided. The method includes forming a first plurality of contacts (415A-C) on the first substrate (320). The method further includes forming an insulative layer (330A-D, 1200) on the first substrate (320) to form a first semiconductor device (305). Each of the first plurality of contacts (415A-C) sits in a cavity (hole) (1205A-C) defined in the insulative layer (330A-D, 1200). The method further includes forming a second plurality of contacts (420A-C, 505A-C) on the second substrate (335) to form a second semiconductor device (310). The method further includes joining the second plurality of contacts (420A-C, 505A-C) to the first plurality of contacts (415A-C) (e.g., by pressing) to form interconnects (315A-C) between the first substrate (320) and the second substrate (335). When the first and second substrates (320, 335) are joined, at least a portion of each of the interconnects (315A- C) is surrounded by the insulative layer (330A-D, 1200). The insulative layer (330A-D, 1200) may prevent squeeze-out of the contacts (415A- C, 420A-C, 505A-C) of the semiconductor devices (305, 310) as the semiconductor devices (305, 310) are joined together (e.g., pressed against each other) and/or prevent the contacts (415A-C, 420A-C, 505A-C) from slipping and causing shorting interconnections between different portions of one or both of the semiconductor devices (305, 310). The insulative layer (330A-D, 1200) may be utilized as a spacer to facilitate the joining of the semiconductor devices (305, 310) to determine when to stop pressing the semiconductor devices (305, 310) together to prevent one semiconductor device from crushing the other semiconductor device, or vice versa. A height/ depth of the cavity (1205A-C) can facilitate definition of a uniform hybridization gap and prevent over-squeeze. Each of the first plurality of contacts (415A-C) may provide a substantially flat surface to receive a corresponding one of the second plurality of contacts (420A- C, 505A-C), wherein each of the second plurality of contacts (420A-C, 505A-C), e.g., formed of plated indium, is harder than a corresponding one of the first plurality of contacts (415A-C), e.g., formed from deposited indium, to penetrate the substantially flat surface of the corr