DEUTERIUM-CONTAINING FILMS
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film...
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| creator | CHUANG, Chih-Chiang SEUTTER, Sean M LE, Hien M PARK, Mun Kyu |
| description | Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
L'invention concerne des films modifiés pour inclure du deutérium dans une chambre de plasma à haute densité inductive. Des conceptions de matériel de chambre permettent l'accordabilité de l'uniformité de concentration de deutérium dans le film à travers un substrat. La fabrication de dispositifs électroniques à l'état solide comprend des flux de traitement intégrés pour modifier un film qui est sensiblement exempt d'hydrogène et de deutérium pour inclure du deutérium. |
| format | Patent |
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L'invention concerne des films modifiés pour inclure du deutérium dans une chambre de plasma à haute densité inductive. Des conceptions de matériel de chambre permettent l'accordabilité de l'uniformité de concentration de deutérium dans le film à travers un substrat. La fabrication de dispositifs électroniques à l'état solide comprend des flux de traitement intégrés pour modifier un film qui est sensiblement exempt d'hydrogène et de deutérium pour inclure du deutérium.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201224&DB=EPODOC&CC=WO&NR=2020257144A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201224&DB=EPODOC&CC=WO&NR=2020257144A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHUANG, Chih-Chiang</creatorcontrib><creatorcontrib>SEUTTER, Sean M</creatorcontrib><creatorcontrib>LE, Hien M</creatorcontrib><creatorcontrib>PARK, Mun Kyu</creatorcontrib><title>DEUTERIUM-CONTAINING FILMS</title><description>Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
L'invention concerne des films modifiés pour inclure du deutérium dans une chambre de plasma à haute densité inductive. Des conceptions de matériel de chambre permettent l'accordabilité de l'uniformité de concentration de deutérium dans le film à travers un substrat. La fabrication de dispositifs électroniques à l'état solide comprend des flux de traitement intégrés pour modifier un film qui est sensiblement exempt d'hydrogène et de deutérium pour inclure du deutérium.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBycQ0NcQ3yDPXVdfb3C3H09PP0c1dw8_TxDeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGQGhqbmhi4mhoTJwqAMTRIU0</recordid><startdate>20201224</startdate><enddate>20201224</enddate><creator>CHUANG, Chih-Chiang</creator><creator>SEUTTER, Sean M</creator><creator>LE, Hien M</creator><creator>PARK, Mun Kyu</creator><scope>EVB</scope></search><sort><creationdate>20201224</creationdate><title>DEUTERIUM-CONTAINING FILMS</title><author>CHUANG, Chih-Chiang ; SEUTTER, Sean M ; LE, Hien M ; PARK, Mun Kyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2020257144A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHUANG, Chih-Chiang</creatorcontrib><creatorcontrib>SEUTTER, Sean M</creatorcontrib><creatorcontrib>LE, Hien M</creatorcontrib><creatorcontrib>PARK, Mun Kyu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHUANG, Chih-Chiang</au><au>SEUTTER, Sean M</au><au>LE, Hien M</au><au>PARK, Mun Kyu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEUTERIUM-CONTAINING FILMS</title><date>2020-12-24</date><risdate>2020</risdate><abstract>Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
L'invention concerne des films modifiés pour inclure du deutérium dans une chambre de plasma à haute densité inductive. Des conceptions de matériel de chambre permettent l'accordabilité de l'uniformité de concentration de deutérium dans le film à travers un substrat. La fabrication de dispositifs électroniques à l'état solide comprend des flux de traitement intégrés pour modifier un film qui est sensiblement exempt d'hydrogène et de deutérium pour inclure du deutérium.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | DEUTERIUM-CONTAINING FILMS |
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