LOW DEPOSITION RATES FOR FLOWABLE PECVD

PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500A/min. L'inv...

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Bibliographische Detailangaben
Hauptverfasser:	MANNA, Pramit, MALLICK, Abhijit Basu, JIANG, Shishi
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500A/min. L'invention concerne des procédés PECVD pour le dépôt d'un film à faible taux de dépôt comprenant l'activation intermittente du plasma. Le film fluide peut être déposé à l'aide d'au moins un précurseur de polysilane et d'un gaz plasma. Le taux de dépôt des procédés décrits peut être inférieur à 500A/min.