ARRAY SUBSTRATE, PREPARATION METHOD, AND DISPLAY APPARATUS

Provided in the present application are an array substrate, a preparation method and a display apparatus. The array substrate comprises a hydrogen ion thin film which is formed between an active later and source/drain layer of a low-temperature polycrystalline silicon thin film transistor; and apertures are formed in a configuration region of a metal oxide semiconductor thin film transistor. On the basis of the hydrogen ion thin film, the electrical characteristics and stability of the low-temperature polycrystalline silicon thin film transistor are improved, and at the same time, hydrogen may not diffuse to the configuration region of the metal oxide semiconductor thin film transistor. La présente invention concerne un substrat de matrice, un procédé de préparation et un appareil d'affichage. Le substrat de matrice comprend un film mince d'ions d'hydrogène qui est formé entre une couche active et une couche de source/drain d'un transistor à films minces de silicium polycristallin à basse température ; et des