HIGH-VOLTAGE DIRECT-CURRENT CABLE MAGNETIC COMPOSITE SEMICONDUCTIVE SHIELDING LAYER AND PREPARATION METHOD THEREFOR

The present invention relates to the field of electric materials, and relates to a high-voltage direct-current cable magnetic semiconductive shielding layer and a preparation method therefor. The high-voltage direct-current cable magnetic semiconductive shielding layer of the present invention is a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHEN, Leran, MA, Lili, HAO, Chuncheng, LEI, Qingquan, XIN, Meng, WEI, Yanhui, LI, Guochang
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS CONDUCTORS ELECTRICITY GENERAL PROCESSES OF COMPOUNDING INSULATORS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS WORKING-UP
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to the field of electric materials, and relates to a high-voltage direct-current cable magnetic semiconductive shielding layer and a preparation method therefor. The high-voltage direct-current cable magnetic semiconductive shielding layer of the present invention is a magnetic composite material. The preparation method for the high-voltage direct-current cable magnetic semiconductive shielding layer comprises: first, adding a magnetic material in the form of powder or slurry to a composite material to prepare a high-voltage direct-current cable magnetic composite semiconductive shielding material, then preparing a high-voltage direct-current cable magnetic semiconductive shielding layer with a hot-pressing crosslinking method, and performing oriented magnetization on the obtained semiconductive shielding layer to obtain a final high-voltage direct-current cable magnetic semiconductive shielding layer. The present invention is mainly applied to a high-voltage direct-current cable