INFRARED-TRANSMITTING HIGH SENSITIVITY VISIBLE LIGHT DETECTOR AND PREPARATION METHOD THEREOF

Provided are an infrared-transmitting high sensitivity visible light detector and preparation method thereof, the detector is composed of a passivation layer (14), an upper electrode (13), a heterojunction (15), a lower electrode (3) and an intrinsic monocrystalline silicon substrate (2). The upper...

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Hauptverfasser: HAN, Jun, LIU, Huan, LIU, Weiguo, BAI, Minyu, WANG, Zhuoman, AN, Yan, CAI, Changlong
Format: Patent
Sprache:chi ; eng ; fre
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Zusammenfassung:Provided are an infrared-transmitting high sensitivity visible light detector and preparation method thereof, the detector is composed of a passivation layer (14), an upper electrode (13), a heterojunction (15), a lower electrode (3) and an intrinsic monocrystalline silicon substrate (2). The upper electrode (13) is of a material which is conductive and is transparent to visible light and infrared. The heterojunction (15) comprises an upper heterojunction layer (5) and a lower heterojunction layer (4), the upper heterojunction layer (5) is nano-film which is sensitive to the visible light and can transmit the infrared, and the lower heterojunction layer (4) is intrinsic monocrystalline silicon. When the visible light and the infrared pass through the upper electrode (13) and the upper heterojunction layer (5), electron hole pairs are excitated by the visible light in the heterojunction (15), are collected by the upper electrode and the lower electrode and are discharged through the metal columns arranged long