DOPED SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING SAME AND USES THEREOF

The present invention concerns a set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the -III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from...

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Bibliographische Detailangaben
Hauptverfasser:	AKDAS, Tugce, REISS, Peter
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention concerns a set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the -III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state. The present invention also relates to the method for preparing same and to the various uses thereof. La présente invention concerne un ensemble de nanocristaux comprenant un semi-conducteur comprenant A représentant un métal ou métalloïde à l'état d'oxydation +III et B représentant un élément à l'état d'oxydation -III, lesdits nanocristaux étant dopés, en moyenne par nanocristal, par un atome de C choisi parmi les métaux de transition à l'état d'oxydation +I ou +II. La présente invention concerne également son procédé de préparation et ses différentes utilisations.