MOLDING MATERIAL FOR SEMICONDUCTOR ENCAPSULATION, PRODUCTION METHOD OF MOLDING MATERIAL FOR SEMICONDUCTOR ENCAPSULATION, AND SEMICONDUCTOR DEVICE USING THIS

In this molding material for semiconductor encapsulation, the content ratio of gel-like substance and/or agglomerates exceeding 100 μm in size is less than or equal to 50 ppm. Dans ce matériau de moulage pour encapsulation de semi-conducteur, le rapport de teneur en substance de type gel et/ou en ag...

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Bibliographische Detailangaben
Hauptverfasser:	KONNO, Yoshimasa, MAEDA, Takeshi
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP
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Beschreibung
Zusammenfassung:	In this molding material for semiconductor encapsulation, the content ratio of gel-like substance and/or agglomerates exceeding 100 μm in size is less than or equal to 50 ppm. Dans ce matériau de moulage pour encapsulation de semi-conducteur, le rapport de teneur en substance de type gel et/ou en agglomérats dépassant 100 µm de taille est inférieur ou égal à 50 ppm. 大きさ１００μｍ超の凝集物及び／又はゲル状物質の含有率が５０ｐｐｍ以下である半導体封止用成形材料。