PREPARATION METHOD FOR SEMICONDUCTOR DEVICE

The present application relates to a preparation method for a semiconductor device, comprising: sequentially forming an isolating dielectric layer (220) and a doped semiconductor layer (230) of a first conductivity type on a non-primitive cell area (M) of a semiconductor substrate; performing a firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	LIAO, Yuanbao
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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