PREPARATION METHOD FOR SEMICONDUCTOR DEVICE

The present application relates to a preparation method for a semiconductor device, comprising: sequentially forming an isolating dielectric layer (220) and a doped semiconductor layer (230) of a first conductivity type on a non-primitive cell area (M) of a semiconductor substrate; performing a first conductivity type of well injection by using the semiconductor layer (230) and the isolating dielectric layer (220) as masks, and forming a well area (213) in a primitive cell area (N); forming an operation structure in the well area (213), and forming a protection structure in the semiconductor layer (230); and forming an interlayer dielectric layer (240) on the operation structure and the protection structure, forming a contact hole in the interlayer dielectric layer (240), forming a metal interconnection layer connected to the contact hole on the interlayer dielectric layer (240), and connecting the operation structure and the protection structure by means of the metal interconnection layer and the contact hol