SYSTEMS AND METHODS FOR LOW PRESSURE DIAMOND GROWTH WITHOUT PLASMA, INCLUDING SEEDING GROWTH

A method for low-pressure diamond growth includes heating a composition comprising a diamond growth seed and a source of reactive carbon to a temperature below 800°C, wherein the heating takes place under low pressure. Responsive to the heating, growing diamonds from the composition. L'inventio...

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Bibliographische Detailangaben
Hauptverfasser:	RAMPERSAUD, Isaac V, HEMMER, Philip R, WEIL, Tanja, ZAPATA, Todd, JELEZKO, Fedor, ALKAHTANI, Masfer Hassan A
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for low-pressure diamond growth includes heating a composition comprising a diamond growth seed and a source of reactive carbon to a temperature below 800°C, wherein the heating takes place under low pressure. Responsive to the heating, growing diamonds from the composition. L'invention concerne un procédé de croissance de diamants à basse pression qui consiste à chauffer une composition comprenant un germe de croissance de diamant et une source de carbone réactif à une température inférieure à 800 °C, le chauffage ayant lieu sous basse pression. Le procédé consiste en outre, en réponse au chauffage, à faire croître des diamants à partir de la composition.